the vrf2933 is a gold-metallized silicon n-channel rf power transistor de- signed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. features ? improved ruggedness v (br)dss = 170v ? 300w with 22db typ. gain @ 30mhz, 50v ? excellent stability & low imd ? common source con guration ? available in matched pairs ? 3:1 load vswr capability at speci ed operating conditions ? nitride passivated ? refractory gold metallization ? improved replacement for sd2933 ? thermally enhanced package ? rohs compliant symbol parameter vrf2933(mp) unit v dss drain-source voltage 170 v i d continuous drain current @ t c = 25c 40 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 648 w t stg storage temperature range -65 to 150 c t j operating junction temperature max 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speci ed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 170 180 v v ds(on) on state drain voltage (i d(on) = 20a, v gs = 10v) 1.8 2.8 i dss zero gate voltage drain current (v ds = 100v, v gs = 0v) 2.0 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 2.0 a g fs forward transconductance (v ds = 10v, i d = 20a) 8 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4941 rev g 9 -2010 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.27 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. vrf2933 vrf2933mp 50v, 300w, 150mhz
vrf2933(mp) dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 740 pf c oss output capacitance v ds = 50v 400 c rss reverse transfer capacitance f = 1mhz 32 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, v dd = 50v, i dq = 250ma, p out = 300w 20 25 db d f 1 = 175mhz, v dd = 50v, i dq = 250ma, p out = 300w 50 % f 1 = 30mhz, v dd = 50v, i dq = 250ma, p out = 300w 3:1 vswr - all phase angles no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-4941 rev g 9 -2010 0 5 10 15 20 25 30 0 2 4 6 8 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 0 1 10 100 1 10 100 800 1.0e ? 11 1.0e ? 10 1.0e ? 9 1.0e ? 8 0 10 20 30 40 50 60 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (f) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (v) 5v 5.5v 4.5v 3.5v 6v 6.5v 7.5v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250 s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) pd max t j = 125c t c = 75c typical performance curves i dmax 4v bvdss line
0 0.05 0.10 0.15 0.20 0.25 0.30 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 vrf2933(mp) 050-4941 rev g 9-2010 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 0 50 100 150 200 250 300 350 400 450 500 0 0.5 1 1.5 2 2.5 3 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 12 output power (w pep ) p out , input power (watts pep) figure 6. p out versus p in output power (w pep ) p out , input power (watts pep) figure 7. p out versus p in 50v 40v freq=30mhz freq=65mhz figure 5b, transient thermal impedance model dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext .079 .076 .115 .009 .080 .224 table 1 - typical class ab large signal input - output impedance z in - gate shunted with 25 i dq = 250ma z ol - conjugate of optimum load for 300 watts output at v dd =150v freq. (mhz) z in z out 2 23.6 - j 5.5 4.0 - j 0.1 13.5 7.6 - j 10.1 3.9 - j 0.6 27.1 3.5 - j 6.0 3.7 - j 1.1 40.7 2.5 - j 4.0 3.3 - j 1.5 65 1.95 - j 2.07 2.6 - j 1.9 100 1.8 - j 0.66 1.76 - j 0.2 150 1.78 + j 0.5 1.03 + j 1.7 0.3 d = 0.9 0.7 single pulse 0.5 0.1 0.05 50v 40v
30 mhz test circuit vrf2933(mp) 050-4941 rev g 9-2010 l1 output c3 c12 c11 c10 c5 c6 c7 c8 c9 c1 1800pf atc100b ceramic c2, c3, c5, c9, c10, c12 0.1uf 100v c6 680 pf metal clad 500v mica c7 arco 467 mica trimmer c8 100 pf atc 100e ceramic c4, c11 10uf 100v electrolytic fb small ferrite bead u i =125 l1 20 nh 2t #18 0.188"d .2"l l2 38 nh - 2.5t #14 enam. .25" dia. l3 2t #16 on 2x 267300081 .5" bead r1-r2 1k ohm 1/4w r3 100 ohm 1w r4 470 ohm "low inductance" 3w t1 16:1 transforner 4t #20 teflon on rf parts co. t1/2 transformer core t2 9:1 transformer 3t #16 teflon on rf parts co. t1 transformer core vbias r1 r2 r4 l2 rf input c2 t1 c1 r3 fb l3 t2 + 50v c4 + vrf2933
pin 1 - drain pin 2 - gate pin 3 - source pin 4 - source pin 5 - source m177 (0.63 dia. soe) mechanical data all dimensions are .005 dim min typ max a 0.225 0.230 0.235 b 0.265 0.270 0.275 c 0.860 0.865 0.870 d 1.130 1.135 1.140 e 0.545 0.550 0.555 f 0.003 0.005 0.007 g 0.098 0.103 0.108 h 0.150 0.160 0.170 i 0.280 j 1.080 1.100 1.120 k 0.625 0.630 0.635 f e g h i a b c d ok j .125d nom .135 r seating plane 1 4 2 3 5 vrf2933(mp) microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. 050-4941 rev g 9-2010 adding mp at the end of p/n speci es a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%.
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